Descriotoin

    This miniature surface mount MOSFET uses advanced trench process, low Rds(on) assures minimal power loss and engorge conversion, which makes this device ideal for use in power management circuit.

Features

•     V_ds(V)=20V

•     Id(A)=6.0A(V_gs=4.5V)

•     Rds(on)=24mΩ@Vgs=4.5V；Rds(on)=33mΩ@Vgs=2.5V；Rds(on)=52mΩ@Vgs=1.8V

•     Low gate charger

•     Fast switching speed

Applications

•     Load switch

•     DC-DC converters

•     Power management